| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRFZ48V |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) |
111.36K |
IRF [International Rectifier] |
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| IRFZ48V |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) |
111.75K |
IRF |
|
| IRFZ48VPBF |
MOSFET, N, 60V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:72A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:150W; Pulse Current Idm:290A; Termination Type:Through Hole; Transistor Type:; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V |
188.2K |
International Rectifier |
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| IRFZ48VPBF |
MOSFET N-CH 60V 72A TO-220AB |
4K |
|
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| IRFZ48VS |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) |
282.7K |
IRF [International Rectifier] |
|
| IRFZ48VS |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) |
282.94K |
IRF |
|
| IRFZ48VSPBF |
HEXFET㈢ Power MOSFET |
183.9K |
IRF [International Rectifier] |
|
| IRFZ48VSTRR |
Power Field-Effect Transistor, 72A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 |
138.73K |
IRF |
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