| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRG4BC20W |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
133.93K |
IRF [International Rectifier] |
 |
| IRG4BC20W |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
131.26K |
IRF |
|
| IRG4BC20WPBF |
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:13A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes |
200.4K |
International Rectifier |
|
| IRG4BC20WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
156.23K |
IRF [International Rectifier] |
|
| IRG4BC20WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
152.79K |
IRF |
|
| IRG4BC20W-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
156.23K |
IRF [International Rectifier] |
|
| IRG4BC20W-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
152.79K |
IRF |
|
| IRG4BC20W-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR |
212.94K |
IRF [International Rectifier] |
|
| IRG4BC20W-STRL |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
152.79K |
ETC |
|
| IRG4BC20W-STRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
152.79K |
ETC |
|
