| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRG4BC30F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
171.88K |
IRF [International Rectifier] |
 |
| IRG4BC30F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
168.89K |
IRF |
|
| IRG4BC30FD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
304.89K |
IRF [International Rectifier] |
|
| IRG4BC30FD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
414.31K |
IRF |
|
| IRG4BC30FD1 |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE |
361.71K |
IRF [International Rectifier] |
|
| IRG4BC30FD1PBF |
Fast CoPack IGBT |
421.57K |
IRF [International Rectifier] |
|
| IRG4BC30FD1PBF |
IGBT 600V 31A 100W Through Hole TO-220AB |
6K |
|
|
| IRG4BC30FDPBF |
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) |
3177.54K |
IRF [International Rectifier] |
|
| IRG4BC30FDPBF |
IGBT 600V 31A 100W Through Hole TO-220AB |
4K |
|
|
| IRG4BC30FD-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE |
1256.5K |
IRF [International Rectifier] |
|
| IRG4BC30FD-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE |
1177.57K |
IRF [International Rectifier] |
|
| IRG4BC30FD-SPBF |
IGBT 600V 31A 100W Surface Mount D2PAK |
6K |
|
|
| IRG4BC30FD-STRLPBF |
暂无描述 |
168.89K |
IRF |
|
| IRG4BC30FD-STRR |
暂无描述 |
168.89K |
IRF |
|
| IRG4BC30FPBF |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR |
218.22K |
IRF [International Rectifier] |
|
| IRG4BC30F-SPBF |
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:D2PAK ;RoHS Compliant: Yes |
161.6K |
International Rectifier |
|
