| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRG4BC40W |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) |
133.27K |
IRF [International Rectifier] |
 |
| IRG4BC40W |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) |
130.52K |
IRF |
|
| IRG4BC40WL |
INSULATED GATE BIPOLAR TRANSISTOR |
343.86K |
IRF [International Rectifier] |
|
| IRG4BC40W-LPBF |
IGBT 600V 40A 160W Through Hole TO-262 |
5K |
|
|
| IRG4BC40WPBF |
ISSULATED GATE BIPOLAR TRANSISTOR |
207.81K |
IRF [International Rectifier] |
|
| IRG4BC40WPBF |
IGBT 600V 40A 160W Through Hole TO-220AB |
4K |
|
|
| IRG4BC40WS |
INSULATED GATE BIPOLAR TRANSISTOR |
343.86K |
IRF [International Rectifier] |
|
| IRG4BC40W-S |
IGBT WARP 600V 40A D2PAK |
129.5K |
International Rectifier |
|
| IRG4BC40W-SPBF |
IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:40A; Voltage, Vce Sat Max:2.5V; Power Dissipation:160W; Case Style:D2-PAK; Termination Type:SMD; Collector-to-Emitter ;RoHS Compliant: Yes |
289.9K |
International Rectifier |
|
| IRG4BC40W-SPBF |
IGBT 600V 40A 160W Surface Mount D2PAK |
5K |
|
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