| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| IRGS6B60KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
309.68K |
IRF [International Rectifier] |
 |
| IRGS6B60KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
307.83K |
IRF |
|
| IRGS6B60KDPBF |
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:13A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:90W; Package/Case:D2PAK ;RoHS Compliant: Yes |
348.5K |
International Rectifier |
|
| IRGS6B60KDPBF |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 |
246.1K |
IRF |
|
| IRGS6B60KDTRLP |
IGBT NPT 600V 13A 90W Surface Mount D2PAK |
4K |
|
|
| IRGS6B60KDTRLPBF |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 |
246.1K |
IRF |
|
