| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| MBR20H100CT |
Dual High-Voltage Schottky Rectifiers |
168.36K |
VISAY [Vishay Siliconix] |
 |
| MBR20H100CT |
Dual High-Voltage Schottky Rectifiers |
168.36K |
VISAY [Vishay Siliconix] |
|
| MBR20H100CT |
Dual High-Voltage Schottky Rectifiers |
164.12K |
VISHAY |
|
| MBR20H100CT |
RATINGS SYMBOL UNIT
Maximum repetitive reverse voltage VRRM V
Maximum RMS voltage VRMS V
Maximum DC blocking voltage VDC V
Maximum average
forward current
per device
IAV A
per diode
Peak forward surge current,
8.3ms single half sine-wave
IFSM A
Typical thermal resistance
(Note 1)
Rθ-JC
°C/W
Operating junction temperature range TJ -55 to +175 °C
Storage temperature range TSTG -55 to +175 °C
Maximum forward voltage
at IF=10A VF
V
Maximum average reverse
IR
0.01
mA
5
TJ=25°C
TJ=125°C
-55 to +150
0.10
15
20
10
40
28
40
45
32
45
60
42
60
100
70
100
150
105
150
200
140
200
220
per leg
0.65 0.75 0.85 0.92
MBR
20H40CT
2.0
superimposed on rated load
current at rated DC blocking
voltage
MBR
20H45CT
MBR
20H60CT
MBR
20H100CT
MBR
20H150CT
MBR
20H200CT
MBR20H40CT - MBR20H200CT
TO-220AB
?3.84±0.15
2.74±0.15
10.0±0.2
15.25±0.3
1.3±0.2
0.8±0.2
2.54±0.1
13.6±0.3
9.0±0.2
1.27±0.10
4.5±0.2
2.5±0.2
0.38±0.10
PIN1 PIN3
PIN2
PIN2
PIN 1
PIN 3
PIN 2 & (case)
? Leads:
? Polarit |
618.83K |
SUNMATE/森美特 |
|
| MBR20H100CT-D |
100V, 20A SWITCHMODE Power Rectifier |
153.58K |
ON Semiconductor |
|
| MBR20H100CTG |
ON Semiconductor [SWITCHMODE Power Rectifier 100 V, 20 A] |
130.58K |
ONSEMI |
|
