| MJD32CT4G |
TRANSISTOR, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:3; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:1.2V; Complementary Device:MJD31CT4G; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:3A; Gain Bandwidth ft Typ:3MHz; Hfe Min:10; Package / Case:D-PAK; Peak Current Icm:5A; Power Dissipation Pd:1.56W; Termination Type:SMD; Transistor Type:; Voltage Vcbo:100V |
81.5K |
ON Semiconductor |
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