| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| MJE3055T |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS |
129.27K |
MOTOROLA [Motorola, Inc] |
 |
| MJE3055T |
COMPLEMENTARY SILICON POWER TRANSISTORS |
129.27K |
ONSEMI [ON Semiconductor] |
|
| MJE3055T |
COMPLEMENTARY SILICON POWER TRANSISTORS |
129.27K |
STMICROELECTRONICS [STMicroelectronics] |
|
| MJE3055T |
General Purpose and Switching Applications |
129.27K |
FAIRCHILD [Fairchild Semiconductor] |
|
| MJE3055T |
Mini size of Discrete semiconductor elements |
129.27K |
ETC [ETC] |
|
| MJE3055T |
NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS) |
129.27K |
SAMSUNG [Samsung semiconductor] |
|
| MJE3055T |
POWER TRANSISTORS(10A,60V,75W) |
129.27K |
MOSPEC [Mospec Semiconductor] |
|
| MJE3055T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
129.27K |
WINGS [Wing Shing Computer Components] |
|
| MJE3055T |
isc Silicon NPN Power Transistor |
107.01K |
ISC [Inchange Semiconductor Company Limited] |
|
| MJE3055T |
TRANS NPN 60V 10A TO-220 |
60K |
|
|
| MJE3055T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
68.59K |
WINGS |
|
| MJE3055T |
NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS) |
221.02K |
SAMSUNG |
|
| MJE3055T |
General Purpose and Switching Applications |
40.13K |
FAIRCHILD |
|
| MJE3055T |
COMPLEMENTARY SILICON POWER TRANSISTORS |
67.98K |
STMICROELECTRONICS |
|
| MJE3055T |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS |
132.48K |
MOTOROLA |
|
| MJE3055T |
COMPLEMENTARY SILICON POWER TRANSISTORS |
132.48K |
ONSEMI |
|
| MJE3055T |
POWER TRANSISTORS(10A,60V,75W) |
127.21K |
MOSPEC |
|
| MJE3055T |
Mini size of Discrete semiconductor elements |
501.12K |
ETC |
|
| MJE3055TDW |
10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN |
132.48K |
ONSEMI |
|
| MJE3055TG |
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Collector Emitter Saturation Voltage, Vce(sat):20V; Power Dissipation, Pd:75W; DC Current Gain Min (hfe):20; Package/Case:3-TO-220 ;RoHS Compliant: Yes |
138.3K |
ON Semiconductor |
|
