| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| MMBT3904WT1 |
General Purpose Transistor |
455.97K |
MOTOROLA [Motorola, Inc] |
 |
| MMBT3904WT1 |
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
455.97K |
ONSEMI [ON Semiconductor] |
|
| MMBT3904WT1 |
General Purpose Transistors(NPN and PNP Silicon) |
455.97K |
LRC [Leshan Radio Company] |
|
| MMBT3904WT1 |
General Purpose Transistor |
424.51K |
MOTOROLA |
|
| MMBT3904WT1 |
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
299.46K |
ONSEMI |
|
| MMBT3904WT1 |
General Purpose Transistors(NPN and PNP Silicon) |
447.86K |
LRC |
|
| MMBT3904WT1-D |
General Purpose Transistor NPN |
153.44K |
ON Semiconductor |
|
| MMBT3904WT1G |
TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-323; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:200mV; Complementary Device:MMBT3906WT1G; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:50mA; Current Ic hFE:100mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Package / Case:SOT-323; Pin Configuration:B(1), C(3), E(2); Power Dissipation Pd:150mW; Power Dissipation Ptot Max:150mW; Termination Type:S... |
109.3K |
ON Semiconductor |
|
| MMBT3904WT1G |
TRANS NPN 40V 0.2A SOT323 |
298K |
|
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