| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| MMBT3906LT1G |
General Purpose Transistor(PNP Silicon) |
97.26K |
ONSEMI [ON Semiconductor] |
 |
| MMBT3906LT1G |
TRANS PNP 40V 0.2A SOT23 |
300K |
|
|
| MMBT3906LT1G |
? Semiconductor Components Industries, LLC, 2011
January, 2011 ? Rev. 9
1 Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1G
General Purpose Transistor
PNP Silicon
Features
? These Devices are Pb ?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector ?Emitter Voltage V
CEO
?40 Vdc
Collector ?Base Voltage V
CBO
?40 Vdc
Emitter ?Base Voltage V
EBO
?5.0 Vdc
Collector Current ? Continuous I
C
?200 mAdc
Collector Current ? Peak (Note 3) I
CM
?800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR ?5 Board
(Note 1) @ T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction ?to ?Ambient R
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @ T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction ?to ?Ambient R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
?55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum |
116.7K |
|
|
| MMBT3906LT1G |
? Semiconductor Components Industries, LLC, 2004
February, 2004 ? Rev. 4
1 Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
? Pb?Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector?Emitter Voltage V
CEO
?40 Vdc
Collector?Base Voltage V
CBO
?40 Vdc
Emitter?Base Voltage V
EBO
?5.0 Vdc
Collector Current ? Continuous I
C
?200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR?5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction?to?Ambient R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
?55 to
+150
°C
1. FR?5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
Preferred devices are recommended choices for futu |
100.73K |
|
|
| MMBT3906LT1G |
General Purpose Transistor(PNP Silicon) |
101.1K |
ONSEMI |
|
| MMBT3906LT1G_818 |
? Semiconductor Components Industries, LLC, 2004
February, 2004 ? Rev. 4
1 Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
? Pb?Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector?Emitter Voltage V
CEO
?40 Vdc
Collector?Base Voltage V
CBO
?40 Vdc
Emitter?Base Voltage V
EBO
?5.0 Vdc
Collector Current ? Continuous I
C
?200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR?5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction?to?Ambient R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
?55 to
+150
°C
1. FR?5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
Preferred devices are recommended choices for futu |
100.73K |
|
|
| MMBT3906LT1G_818 |
? Semiconductor Components Industries, LLC, 2011
January, 2011 ? Rev. 9
1 Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1G
General Purpose Transistor
PNP Silicon
Features
? These Devices are Pb ?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector ?Emitter Voltage V
CEO
?40 Vdc
Collector ?Base Voltage V
CBO
?40 Vdc
Emitter ?Base Voltage V
EBO
?5.0 Vdc
Collector Current ? Continuous I
C
?200 mAdc
Collector Current ? Peak (Note 3) I
CM
?800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR ?5 Board
(Note 1) @ T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction ?to ?Ambient R
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @ T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction ?to ?Ambient R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
?55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum |
116.7K |
|
|
