| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| MMBT3906WT1 |
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
455.97K |
ONSEMI [ON Semiconductor] |
 |
| MMBT3906WT1 |
General Purpose Transistor |
455.97K |
MOTOROLA [Motorola, Inc] |
|
| MMBT3906WT1 |
General Purpose Transistors(NPN and PNP Silicon) |
455.97K |
LRC [Leshan Radio Company] |
|
| MMBT3906WT1 |
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
299.46K |
ONSEMI |
|
| MMBT3906WT1 |
General Purpose Transistor |
424.51K |
MOTOROLA |
|
| MMBT3906WT1 |
General Purpose Transistors(NPN and PNP Silicon) |
447.86K |
LRC |
|
| MMBT3906WT1G |
TRANSISTOR, PNP, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:250; Transistor Case Style:SOT-323; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:250mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; Package / Case:SOT-323; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type: |
109.3K |
ON Semiconductor |
|
| MMBT3906WT1G |
TRANS PNP 40V 0.2A SOT323 |
298K |
|
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