| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| MMBT5551-7-F |
Diodes Incorporated [NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR] |
419.38K |
DIODES |
 |
| MMBT5551-7-F |
TRANS NPN 160V 0.6A SOT23-3 |
212K |
|
|
| MMBT5551-A-AE3-B-R |
Unisonic Technologies [HIGH VOLTAGE SWITCHING TRANSISTOR] |
51.51K |
UTC |
|
| MMBT5551-A-AE3-E-R |
Unisonic Technologies [HIGH VOLTAGE SWITCHING TRANSISTOR] |
51.51K |
UTC |
|
| MMBT5551DW |
Dated：04/05/2013 Rev：01
TOP DYNAMIC
MMBT5551DW
NPN Silicon Epitaxial Planar Transistors
for high voltage amplifier applications.
Absolute Maximum Ratings (T
a
= 25 ℃)
Parameter Symbol Value Unit
Collector Base Voltage V
CBO
180 V
Collector Emitter Voltage V
CEO
160 V
Emitter Base Voltage V
EBO
6 V
Collector Current I
C
600 mA
Power Dissipation P
tot
200 mW
Junction Temperature T
j
150 ℃
Storage Temperature Range T
stg
- 55 to + 150 ℃
Characteristics at T
amb
=25 ℃
Parameter Symbol Min. Max. Unit
DC Current Gain
at V
CE
= 5 V, I
C
= 1 mA
at V
CE
= 5 V, I
C
= 10 mA
at V
CE
= 5 V, I
C
= 50 mA
h
FE
h
FE
h
FE
80
80
30
-
250
-
-
-
-
Collector Base Cutoff Current
at V
CB
= 120 V
I
CBO
- 50 nA
Emitter Base Cutoff Current
at V
EB
= 4 V
I
EBO
- 50 nA
Collector Base Breakdown Voltage
at I
C
= 100 μA
V
(BR)CBO
180 - V
Collector Emitter B |
126.12K |
TD |
|
| MMBT5551L-A-AE3-C-R |
Unisonic Technologies [HIGH VOLTAGE SWITCHING TRANSISTOR] |
51.51K |
UTC |
|
| MMBT5551L-B-AE3-C-R |
Unisonic Technologies [HIGH VOLTAGE SWITCHING TRANSISTOR] |
51.51K |
UTC |
|
| MMBT5551LT1 |
High Voltage Transistors |
97.57K |
MOTOROLA [Motorola, Inc] |
|
| MMBT5551LT1 |
High Voltage Transistors |
97.57K |
ONSEMI [ON Semiconductor] |
|
| MMBT5551LT1 |
High Voltage Transistors(NPN Silicon) |
97.57K |
ONSEMI [ON Semiconductor] |
|
| MMBT5551LT1 |
High Voltage Transistors(NPN Silicon) |
97.57K |
LRC [Leshan Radio Company] |
|
| MMBT5551LT1 |
High Voltage Transistors |
202.94K |
MOTOROLA |
|
| MMBT5551LT1 |
High Voltage Transistors(NPN Silicon) |
202.94K |
ONSEMI |
|
| MMBT5551LT1 |
High Voltage Transistors(NPN Silicon) |
163.99K |
LRC |
|
| MMBT5551LT1G |
High Voltage Transistors |
97.57K |
ONSEMI [ON Semiconductor] |
|
| MMBT5551LT1G |
TRANS NPN 160V 0.6A SOT23 |
300K |
|
|
| MMBT5551LT1G |
High Voltage Transistors |
101.41K |
ONSEMI |
|
| MMBT5551LT3 |
High Voltage Transistors |
199.8K |
ONSEMI [ON Semiconductor] |
|
| MMBT5551LT3 |
High Voltage Transistors |
101.41K |
ONSEMI |
|
| MMBT5551LT3G |
High Voltage Transistors |
199.8K |
ONSEMI [ON Semiconductor] |
|
