| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| MMBTA63LT1 |
Darlington Transistors |
115.01K |
MOTOROLA [Motorola, Inc] |
 |
| MMBTA63LT1 |
Darlington Transistors(PNP Silicon) |
115.01K |
LRC [Leshan Radio Company] |
|
| MMBTA63LT1 |
Darlington Transistors(PNP Silicon) |
115.01K |
ONSEMI [ON Semiconductor] |
|
| MMBTA63LT1 |
Darlington Transistors |
160.46K |
MOTOROLA |
|
| MMBTA63LT1 |
Darlington Transistors(PNP Silicon) |
73.72K |
ONSEMI |
|
| MMBTA63LT1 |
Darlington Transistors(PNP Silicon) |
114.77K |
LRC |
|
| MMBTA63LT1_06 |
ON Semiconductor [Darlington Transistors PNP Silicon] |
60.8K |
ONSEMI |
|
| MMBTA63LT1-D |
Darlington Transistor PNP |
125.97K |
ON Semiconductor |
|
| MMBTA63LT1G |
BIPOLAR TRANSISTOR, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain Max (hfe):10000 ;RoHS Compliant: Yes |
98.6K |
ON Semiconductor |
|
| MMBTA63LT1G |
TRANS PNP DARL 30V 0.5A SOT23 |
300K |
|
|
