| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| MPSA13 |
TO-92 Plastic-Encapsulate Transistors |
82.25K |
江苏长电 |
 |
| MPSA13 |
NPN Silicon Darlington Transistor |
433.89K |
MCC |
|
| MPSA13 |
Darlington Transistors |
228.98K |
MOTOROLA |
|
| MPSA13 |
NPN Darlington Transistor |
606.09K |
FAIRCHILD |
|
| MPSA13 |
NPN DARLINGTON TRANSISTOR |
124.1K |
TRSYS |
|
| MPSA13 |
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DARLINGTON TRANSISTOR) |
65.76K |
KEC |
|
| MPSA13 |
Darlington Transistors(NPN Silicon) |
228.98K |
ONSEMI |
|
| MPSA13 |
Mini size of Discrete semiconductor elements |
501.12K |
ETC |
|
| MPSA13/D |
CASE 29?5, STYLE 1 TO?2 (TO?26AE) |
225.92K |
|
|
| MPSA13_05 |
Fairchild Semiconductor [NPN Darlington Transistor] |
30.52K |
FAIRCHILD |
|
| MPSA13-A |
Transistor |
433.89K |
MCC |
|
| MPSA13-AP-HF |
Small Signal Bipolar Transistor, |
433.89K |
MCC |
|
| MPSA13-D |
Darlington Transistors NPN |
78.01K |
ON Semiconductor |
|
| MPSA13DA |
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
|
86.37K |
ETC |
|
| MPSA13DB |
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
|
86.37K |
ETC |
|
| MPSA13DC |
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
|
86.37K |
ETC |
|
| MPSA13G |
ON Semiconductor [Darlington Transistors NPN Silicon] |
72.21K |
ONSEMI |
|
| MPSA13RA |
BIPOLAR TRANSISTOR, NPN, 30V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain Max (hfe):10000 ;RoHS Compliant: Yes |
154.3K |
Fairchild Semiconductor |
|
| MPSA13RLRA |
ON Semiconductor [Darlington Transistors NPN Silicon] |
72.21K |
ONSEMI |
|
| MPSA13RLRAG |
ON Semiconductor [Darlington Transistors NPN Silicon] |
72.21K |
ONSEMI |
|
