| NCE65T180F |
FEATURES
? Reduced t
rr
, Q
rr
, and I
RRM
? Low figure-of-merit (FOM) R
on
x Q
g
? Low input capacitance (C
iss
)
? Low switching losses due to reduced Q
rr
? Ultra low gate charge (Q
g
)
? Avalanche energy rated (UIS)
APPLICATIONS
? Telecommunications
- Server and telecom power supplies
? Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
? Consumer and computing
- ATX power supplies
? Industrial
- Welding
- Battery chargers
? Renewable energy
- Solar (PV inverters)
? Switch mode power supplies (SMPS)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 ?, I
AS
= 5.1 A.
c. 1.6 mm from case.
d. I
SD
? I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 650
R
DS(on)
max. ( ?) at 25 °C V
GS
= 10 V 0.1 9
Q
g
max. (nC) 106
Q
gs
(nC) 14
Q
gd
(nC) 33
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
ABSOLUTE MAXIMUM RATIN |
1154.67K |
|
 |
| NCE65T180F_871 |
FEATURES
? Reduced t
rr
, Q
rr
, and I
RRM
? Low figure-of-merit (FOM) R
on
x Q
g
? Low input capacitance (C
iss
)
? Low switching losses due to reduced Q
rr
? Ultra low gate charge (Q
g
)
? Avalanche energy rated (UIS)
APPLICATIONS
? Telecommunications
- Server and telecom power supplies
? Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
? Consumer and computing
- ATX power supplies
? Industrial
- Welding
- Battery chargers
? Renewable energy
- Solar (PV inverters)
? Switch mode power supplies (SMPS)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 ?, I
AS
= 5.1 A.
c. 1.6 mm from case.
d. I
SD
? I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 650
R
DS(on)
max. ( ?) at 25 °C V
GS
= 10 V 0.1 9
Q
g
max. (nC) 106
Q
gs
(nC) 14
Q
gd
(nC) 33
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
ABSOLUTE MAXIMUM RATIN |
1154.67K |
|
|
