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| 电子市场首页 > IC > PDF查询 |
| 型号 | 简要描述 | 文件大小 | 厂家 | 下载 |
| SI1903DL-T1-E3 | MOSFET TRANSISTOR; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):995mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Current Id Max:440mA; Package / Case:6-SC-70; Voltage Vds Typ:-20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:-4.5V | 89.4K | Vishay |  |