| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| SI2301 |
20V P-Channel Enhancement Mode MOSFET |
3582.03K |
金誉 |
 |
| SI2301ADS |
P-Channel 2.5-V (G-S) MOSFET |
39.91K |
VISAY [Vishay Siliconix] |
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| SI2301ADS |
P-Channel 2.5-V (G-S) MOSFET |
41.25K |
VISHAY |
|
| SI2301BD |
P-Channel 2.5-V (G-S) MOSFET |
59.87K |
VISAY [Vishay Siliconix] |
|
| SI2301BD |
P-Channel 2.5-V (G-S) MOSFET |
61.08K |
VISHAY |
|
| SI2301BDS |
P-Channel 2.5-V (G-S) MOSFET |
59.87K |
VISAY [Vishay Siliconix] |
|
| SI2301BDS |
P-Channel 2.5-V (G-S) MOSFET |
61.08K |
VISHAY |
|
| SI2301BDS_08 |
Vishay Siliconix [P-Channel 2.5-V (G-S) MOSFET] |
93.77K |
VISAY |
|
| SI2301BDS-T1 |
P-Channel 2.5-V (G-S) MOSFET |
59.87K |
VISAY [Vishay Siliconix] |
|
| SI2301BDS-T1 |
P-Channel 2.5-V (G-S) MOSFET |
61.08K |
VISHAY |
|
| SI2301BDS-T1-E3 |
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-20V; Current, Id Cont:2.2A; Resistance, Rds On:0.1ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-0.95V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:2.2A; Current, Idm Pulse:10A; No. of Pins:3; Power Dissipation:0.7W; Power Output:0.7W; Power, Pd:0.7W; Power, Ptot:0.7W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V P Channel:.15ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:.1ohm; Resistance, Rds on Max:0.1ohm; SMD Marking:L1; Temperature, Current:25°C; Temperature, Full Powe... |
88.8K |
Vishay |
|
| SI2301BDS-T1-E3 |
MOSFET P-CH 20V 2.2A SOT23-3 |
212K |
|
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| SI2301BDS-T1-GE3 |
MOSFET P-CH 20V 2.2A SOT23-3 |
212K |
|
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| SI2301CDS |
P-Channel 20 V (D-S) MOSFET |
77.86K |
Vishay Intertechnology |
|
| SI2301CDS-T1-E3 |
MOSFET P-CH 20V 3.1A SOT23-3 |
198K |
|
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| SI2301CDS-T1-GE3 |
MOSFET, P-CH, 20V, 3.1A, SOT23; Transistor Polarity:P Channel; Current Id Max:-3.1A; Drain Source Voltage Vds:-20V; On State Resistance:90mohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:8V; Power Dissipation:1.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3 |
81.1K |
Vishay |
|
| SI2301CDS-T1-GE3 |
MOSFET P-CH 20V 3.1A SOT23-3 |
198K |
|
|
| SI2301DS |
P-Channel 1.25-W, 2.5-V MOSFET |
55.56K |
VISAY [Vishay Siliconix] |
|
| SI2301DS |
P-Channel 1.25-W, 2.5-V MOSFET |
1248.67K |
永裕泰 |
|
| SI2301DS |
|
0.18K |
飞思卡尔 |
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