| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| SI2305 |
20V P-Channel Enhancement Mode MOSFET |
3451.17K |
金誉 |
 |
| SI2305CDS |
P-Channel 8 V (D-S) MOSFET |
107.99K |
Vishay Intertechnology |
|
| SI2305CDS-T1-GE3 |
MOSFET P-CH 8V 5.8A SOT23-3 |
228K |
|
|
| SI2305DS |
P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
54.18K |
VISAY [Vishay Siliconix] |
|
| SI2305DS |
P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
54.95K |
VISHAY |
|
| SI2305DS-T1-E3 |
MOSFET, P, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Transistor Case Style:TO-236; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.5A; Package / Case:TO-236; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:-8V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V |
89.7K |
Vishay |
|
