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| 电子市场首页 > IC > PDF查询 |
| 型号 | 简要描述 | 文件大小 | 厂家 | 下载 |
| SI2305DS | P-Channel 1.25-W, 1.8-V (G-S) MOSFET | 54.18K | VISAY [Vishay Siliconix] |  |
| SI2305DS | P-Channel 1.25-W, 1.8-V (G-S) MOSFET | 54.95K | VISHAY | |
| SI2305DS-T1-E3 | MOSFET, P, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Transistor Case Style:TO-236; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.5A; Package / Case:TO-236; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:-8V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V | 89.7K | Vishay | |