SI2314EDS-T1-E3 |
MOSFET, N, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:950mV; Transistor Case Style:TO-236; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:4.9A; Package / Case:TO-236; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:950mV; Voltage Vgs Rds on Measurement:4.5V |
87.9K |
Vishay |
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