型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
SMD1102 |
10-Bit Data Acquisition System for Autonomous Environmental Monitoring |
502.03K |
|
 |
SMD1102 |
10-Bit Data Acquisition System for Autonomous Environmental Monitoring |
499.66K |
ETC |
 |
SMD1103 |
10-Bit Data Acquisition System for Autonomous Environmental Monitoring |
502.03K |
|
 |
SMD1103 |
10-Bit Data Acquisition System for Autonomous Environmental Monitoring |
499.66K |
ETC |
 |
SMD1103S |
10-Bit Data Acquisition System for Autonomous Environmental Monitoring |
502.03K |
|
 |
SMD1103S |
10-Bit Data Acquisition System for Autonomous Environmental Monitoring |
499.66K |
ETC |
 |
SMD1108 |
8-Channel Auto-Monitor ADC In System Programmable Analog (ISPA) Device |
734.28K |
Summit Microelectronics, Inc. |
 |
SMD1108F |
8-Channel Auto-Monitor ADC In System Programmable Analog (ISPA) Device |
734.28K |
Summit Microelectronics, Inc. |
 |
SMD110PL |
1150PL 1200PL 110PL 18PL 16PL 15PL 14PL 13PL 12PL
SMD
SMD12PL - SMD1200PL
VOLTAGE RANGE: 20 - 200V
CURRENT: 1.0 A
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
20
14
20
V
RRM
VRMS
VDC
I(AV)
IFSM
VF
1.0
25.0
0.70
Operating junction temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
IR
0.5
CJ
T J
TSTG
80
Storage temperature range
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
100
Amp
Amps
Volts
pF
C
mA
C -65 to +150
-65 to +150
10.0 5.0
0.55 0.95
110
150
105
150
200
140
200
0.85
0.2
2.0
Maximum Ratings and Electrical Characteristics
T A = 25C unless otherwise specified
Single phase, half wave, 60Hz |
144.95K |
SUNMATE/森美特 |
 |
SMD110PL (1) |
1150PL 1200PL 110PL 18PL 16PL 15PL 14PL 13PL 12PL
SMD
SMD12PL - SMD1200PL
VOLTAGE RANGE: 20 - 200V
CURRENT: 1.0 A
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
20
14
20
V
RRM
VRMS
VDC
I(AV)
IFSM
VF
1.0
25.0
0.70
Operating junction temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
IR
0.5
CJ
T J
TSTG
80
Storage temperature range
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
100
Amp
Amps
Volts
pF
C
mA
C -65 to +150
-65 to +150
10.0 5.0
0.55 0.95
110
150
105
150
200
140
200
0.85
0.2
2.0
Maximum Ratings and Electrical Characteristics
T A = 25C unless otherwise specified
Single phase, half wave, 60Hz |
144.95K |
SUNMATE/森美特 |
 |
SMD110PL-TP |
Diode Schottky 100V 1A Surface Mount SOD-123FL |
210K |
|
 |