型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
SS8050 |
2W Output Amplifier of Portable Radios in Class B Push-pull Operation. |
58.38K |
FAIRCHILD [Fairchild Semiconductor] |
|
SS8050 |
TRANSISTOR (NPN) |
58.38K |
WINGS [Wing Shing Computer Components] |
|
SS8050 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
SS8050 TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 1 W (T
A
=25 ℃)
: 2 W (T
C
=25 ℃)
MAXIMUM RATINGS (T
A
=25 ℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous 1.5 A
T
j
Junction Temperature 150 ℃
T
stg
Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
I
C
=100uA, I
E
=0 40 V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
=0.1mA, I
B
=0 25 V
Emitter-base breakdown voltage V
(BR)EBO
I
E
=100 μA, I
C
=0 5 V
Collector cut-off current I
CBO
V
CB
=40V, I
E
=0 0.1 μA
Emi |
165.64K |
|
|
SS8050 |
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60.03K |
|
|
SS8050 |
TRANSISTOR (NPN) |
61.21K |
WINGS |
|
SS8050 |
2W Output Amplifier of Portable Radios in Class B Push-pull Operation. |
43.35K |
FAIRCHILD |
|
SS8050 SOT-23 |
Complimentary to SS8550 |
866.21K |
金誉 |
|
SS8050 SOT-323 |
Complimentary to SS8550 |
839.84K |
金誉 |
|
SS8050 SOT-23 |
|
0.15K |
银河微电子 |
|
SS8050_841 |
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|
60.03K |
|
|
SS8050_841 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
SS8050 TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 1 W (T
A
=25 ℃)
: 2 W (T
C
=25 ℃)
MAXIMUM RATINGS (T
A
=25 ℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous 1.5 A
T
j
Junction Temperature 150 ℃
T
stg
Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO
I
C
=100uA, I
E
=0 40 V
Collector-emitter breakdown voltage V
(BR)CEO
I
C
=0.1mA, I
B
=0 25 V
Emitter-base breakdown voltage V
(BR)EBO
I
E
=100 μA, I
C
=0 5 V
Collector cut-off current I
CBO
V
CB
=40V, I
E
=0 0.1 μA
Emi |
165.64K |
|
|
SS8050B |
暂无描述 |
43.35K |
FAIRCHILD |
|
SS8050BBU |
TRANS NPN 25V 1.5A TO-92 |
224K |
|
|
SS8050BBU-B |
Small Signal Bipolar Transistor |
43.35K |
FAIRCHILD |
|
SS8050BBU-C |
暂无描述 |
43.35K |
FAIRCHILD |
|
SS8050CBU |
TRANS NPN 25V 1.5A TO-92 |
224K |
|
|
SS8050D |
暂无描述 |
43.35K |
FAIRCHILD |
|
SS8050DBU |
TRANS NPN 25V 1.5A TO-92 |
224K |
|
|
SS8050DTA |
TRANS NPN 25V 1.5A TO-92 |
224K |
|
|
SS8050LT1 |
SOT-323 Plastic-Encapsulate Transistors |
88.02K |
江苏长电 |
|