| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| TK15A60U |
TK15A60U
2009-09-29 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK15A60U
Switching Regulator Applications
? Low drain-source ON-resistance: R
DS (ON)
= 0.24 ? (typ.)
? High forward transfer admittance: ?Y
fs
? = 8.5 S (typ.)
? Low leakage current: I
DSS
= 100 μA (V
DS
= 600 V)
? Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
15
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
30
A
Drain power dissipation (Tc = 25°C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
81 mJ
Avalanche current (Note 3) I
AR
15 A
Repetitive avalanche energy E
AR
4 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant |
156.44K |
|
 |
| TK15A60U |
TK15A60U
2009-09-29 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK15A60U
Switching Regulator Applications
? Low drain-source ON-resistance: R
DS (ON)
= 0.24 ? (typ.)
? High forward transfer admittance: ?Y
fs
? = 8.5 S (typ.)
? Low leakage current: I
DSS
= 100 μA (V
DS
= 600 V)
? Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
15
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
30
A
Drain power dissipation (Tc = 25°C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
81 mJ
Avalanche current (Note 3) I
AR
15 A
Repetitive avalanche energy E
AR
4 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant |
162.27K |
|
|
| TK15A60U_1165 |
TK15A60U
2009-09-29 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK15A60U
Switching Regulator Applications
? Low drain-source ON-resistance: R
DS (ON)
= 0.24 ? (typ.)
? High forward transfer admittance: ?Y
fs
? = 8.5 S (typ.)
? Low leakage current: I
DSS
= 100 μA (V
DS
= 600 V)
? Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
15
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
30
A
Drain power dissipation (Tc = 25°C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
81 mJ
Avalanche current (Note 3) I
AR
15 A
Repetitive avalanche energy E
AR
4 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant |
162.27K |
|
|
| TK15A60U_1165 |
TK15A60U
2009-09-29 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK15A60U
Switching Regulator Applications
? Low drain-source ON-resistance: R
DS (ON)
= 0.24 ? (typ.)
? High forward transfer admittance: ?Y
fs
? = 8.5 S (typ.)
? Low leakage current: I
DSS
= 100 μA (V
DS
= 600 V)
? Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
15
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
30
A
Drain power dissipation (Tc = 25°C)
P
D
40 W
Single pulse avalanche energy
(Note 2)
E
AS
81 mJ
Avalanche current (Note 3) I
AR
15 A
Repetitive avalanche energy E
AR
4 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant |
156.44K |
|
|
