型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
UMG9 |
TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SOT-25VAR |
161.89K |
|
 |
UMG9 |
TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SOT-25VAR
|
166.2K |
ETC |
 |
UMG9N |
Emitter common (dual digital transistors) |
76.34K |
ROHM [Rohm] |
 |
UMG9N |
Emitter common (dual digital transistors) |
70.41K |
ROHM |
 |
UMG9NTR |
TRANSISTOR DUAL UM5 NPN/NPN; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:30; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-353; No. of Pins:5; SVHC:No SVHC (18-Jun-2010); Gain Bandwidth ft Typ:250MHz; Package / Case:SOT-353; Termination Type:SMD; Transistor Type:General Purpose; Current Ic Continuous a Max:100mA; Hfe Min:30; Power Dissipation Pd:150mW |
67.2K |
Rohm |
 |
UMG9NTR |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5 |
1260K |
|
 |
UMG9TL |
暂无描述 |
70.41K |
ROHM |
 |