| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| US3M |
Ultrafast Switching Surface Mount Si-Rectifiers |
164.76K |
DIOTEC [Diotec Semiconductor] |
 |
| US3M |
SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER |
164.76K |
SSE [Shanghai Sunrise Electronics] |
|
| US3M |
|
70.03K |
MDD |
|
| US3M |
SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER |
19.82K |
SSE |
|
| US3M |
Ultrafast Switching Surface Mount Si-Rectifiers |
166.68K |
DIOTEC |
|
| US3M |
Ultra silicon rectifier diodes |
183.43K |
SEMIKRON |
|
| US3M |
US3A - US3M
VOLTAGE RANGE: 50 - 1000V
! Glass Passivated Die Construction
!
! Low Forward Voltage Drop, High Efficiency
!
!
! Plastic Case Material has UL Flammability
! Case: SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.21 grams (approx.)
Low Power Loss
Classification Rating 94V-O
Ideally Suited for Automatic Assembly
Ultra-Fast Recovery Time
CURRENT: 3.0 A
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
V
V
V
A
A
V
V RRM
V RMS
V DC
I (AV)
I FSM
V F
3.0
100.0
Operating junction and storage temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375 ” (9.5mm) lead length at T A =55 C
Peak forward sur |
205.74K |
SUNMATE/森美特 |
|
| US3M SMB |
|
700.37K |
深圳市固得沃克电子有限公司 |
|
| US3MB |
|
72.54K |
MDD |
|
| US3MB |
Unit
US3MB US3KB US3JB US3GB
US3AB - US3MB
US3DB US3BB US3AB
Case: SMB/DO-214AA, Molded Plastic
VOLTAGE RANGE: 50 - 1000V
! Glass Passivated Die Construction
!
! Low Forward Voltage Drop, High Efficiency
!
!
! Plastic Case Material has UL Flammability
!
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
!
Low Power Loss
Classification Rating 94V-O
Ideally Suited for Automatic Assembly
Ultra-Fast Recovery Time
CURRENT: 3.0 A
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
V
V
V
A
A
V
V RRM
V RMS
V DC
I (AV)
I FSM
V F
3.0
100.0
Operating junction and storage temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375 ” (9.5mm) lead length at T A = |
211.92K |
SUNMATE/森美特 |
|
| US3MBF |
US3GBF US3DBF US3BBF US3ABF
US3ABF - US3MBF
Symbol
US3MBF US3KBF US3JBF
VOLTAGE RANGE: 50 - 1000V
! Glass Passivated Die Construction
!
! Low Forward Voltage Drop, High Efficiency
!
!
! Plastic Case Material has UL Flammability
Low Power Loss
Classification Rating 94V-O
Ideally Suited for Automatic Assembly
Ultra-Fast Recovery Time
CURRENT: 3.0 A
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
V
V
V
A
A
V
V RRM
V RMS
V DC
I (AV)
I FSM
V F
3.0
100.0
Operating junction and storage temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375 ” (9.5mm) lead length at T A =55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC |
394.07K |
|
|
| US3MBF |
US3KBF
US3ABF THRU US3MBF
Reverse Voltage - 50 to 1000 Volts Forward Current -
3.0 Amperes
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.5x12.7mm) copper pad areas
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
VOLTS
VOLTS
VOLTS
SYMBOLS UNITS
Amps
Amps
Volts
VRRM
VRMS
VDC
I(AV)
IFSM
VF
3.0
100.0
1.3
Operating junction and storage temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=65 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
IR
5.0
100.0
RθJA
CJ
TJ,TSTG
55
75
-55 to +150
pF
C
A μ
Typical thermal resistance (NOTE 3)
C/W
Typical junction capacitance (NOTE 2)
Maximum reverse |
584.15K |
|
|
| US3MBF_828 |
US3KBF
US3ABF THRU US3MBF
Reverse Voltage - 50 to 1000 Volts Forward Current -
3.0 Amperes
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.5x12.7mm) copper pad areas
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
VOLTS
VOLTS
VOLTS
SYMBOLS UNITS
Amps
Amps
Volts
VRRM
VRMS
VDC
I(AV)
IFSM
VF
3.0
100.0
1.3
Operating junction and storage temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=65 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
IR
5.0
100.0
RθJA
CJ
TJ,TSTG
55
75
-55 to +150
pF
C
A μ
Typical thermal resistance (NOTE 3)
C/W
Typical junction capacitance (NOTE 2)
Maximum reverse |
584.15K |
|
|
| US3MBF_828 |
US3GBF US3DBF US3BBF US3ABF
US3ABF - US3MBF
Symbol
US3MBF US3KBF US3JBF
VOLTAGE RANGE: 50 - 1000V
! Glass Passivated Die Construction
!
! Low Forward Voltage Drop, High Efficiency
!
!
! Plastic Case Material has UL Flammability
Low Power Loss
Classification Rating 94V-O
Ideally Suited for Automatic Assembly
Ultra-Fast Recovery Time
CURRENT: 3.0 A
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
V
V
V
A
A
V
V RRM
V RMS
V DC
I (AV)
I FSM
V F
3.0
100.0
Operating junction and storage temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375 ” (9.5mm) lead length at T A =55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC |
394.07K |
|
|
| US3MBF-HAF |
Dated：07/09/2016 JD Rev：01
TOP DYNAMIC
US3ABF THRU US3MBF-HAF
Surface Mount Fast Recovery Rectifier
Reverse Voltage - 50 to 1000 V
Forward Current - 3 A
Features
? Glass Passivated Chip Juntion
? For surface mounted applications
? Low profile package
? Fast reverse recovery time
? Halogen and Antimony Free(HAF), RoHS compliant
Mechanical Data
? Case: SMBF
? Terminals: Solderable per
MIL-STD-750, Method 2026
Absolute Maximum Ratings and Characteristics
Ratings at 25° ? ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20%.
Parameter
Symbols US3ABF US3BBF US3DBF US3GBF US3JBF US3KBF US3MBF Units
Marking U3AB U3BB U3DB U3GB U3JB U3KB U3MB -
Maximum Repetitive Peak Reverse Voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage V
DC
50 100 200 400 600 800 1000 V
Maximum |
261.03K |
TD |
|
| US3MC |
US3MC US3KC US3JC US3GC US3DC US3BC US3AC
US3AC - US3MC
VOLTAGE RANGE: 50 - 1000V
! Glass Passivated Die Construction
!
! Low Forward Voltage Drop, High Efficiency
!
!
! Plastic Case Material has UL Flammability
! Case: SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.21 grams (approx.)
Low Power Loss
Classification Rating 94V-O
Ideally Suited for Automatic Assembly
Ultra-Fast Recovery Time
CURRENT: 3.0 A
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
V
V
V
A
A
V
V RRM
V RMS
V DC
I (AV)
I FSM
V F
3.0
100.0
Operating junction and storage temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375 ” (9.5m |
205.59K |
SUNMATE/森美特 |
|
| US3MF |
|
0.32K |
TD |
|
