MGSF1N03LT1 MGSF1N03L MGSF1N03 MGSF1N02LT1G MGSF1N02LT1 MGSF1N02L MGSF1N02ELT1G MGSF1N02ELT1/NE MGSF1N02ELT1 MGSF1N02EMGSF1N03LT3
您是否在找:标准包装:10
类别:分离式半导体产品
家庭:FET-单路
系列:-
FET型:MOSFETN通道,金属氧化物
FET特点:逻辑电平门
开态Rds(最大)@Id,Vgs@25°C:100毫欧@1.2A,10V
漏极至源极电压(Vdss):30V
电流-连续漏极(Id)@25°C:1.6A
MGSF1N03LT1G PDF下载
- 大小:69.3KB
厂家:ON Semiconductor MOSFET, N, 30V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:1.6mA; Package / Case:SOT-23; Power Dissipation Pd:420mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V


