SI2333DS-T1 SI2333DS SI2333CDS-T1-GE3 SI2333CDS-T1-E3 SI2333 SI2331DS-T1-E3 SI2331DS-T1 SI2331DS SI232CDR SI2329DS-T1-E3SI2335
您是否在找:标准包装:1
类别:分离式半导体产品
家庭:FET-单路
系列:TrenchFET®
FET型:MOSFETP通道,金属氧化物
FET特点:逻辑电平门
开态Rds(最大)@Id,Vgs@25°C:32毫欧@5.3A,4.5V
漏极至源极电压(Vdss):12V
电流-连续漏极(Id)@25°C:4.1A
SI2333DS-T1-E3 PDF下载
- 大小:90.9KB
厂家:Vishay MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:-4.1A; Package / Case:SOT-23; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V


