NTD30N02T4 NTD30N02 NTD3055L170T4G NTD3055L170T4 NTD3055L170G NTD3055L170-1G NTD3055L170 NTD3055L104T4G NTD3055L104T4 NTD3055L104GNTJS3151PT1G
您是否在找:产品变化通告:SpecificationChangeMSLUpdated2/April/2007ProductObsolescence08/Apr/2011
标准包装:1,000
类别:分离式半导体产品
家庭:FET-单路
系列:-
FET型:MOSFETN通道,金属氧化物
FET特点:逻辑电平门
开态Rds(最大)@Id,Vgs@25°C:175毫欧@1A,5V
漏极至源极电压(Vdss):60V
NTF3055L175T1G PDF下载
- 大小:76.5KB
厂家:ON Semiconductor MOSFET, N, 60V, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):175mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (15-Dec-2010); Current Id Max:2A; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:5V


