MJD243-1 MJD243 MJD210TM MJD210TF MJD210T4G MJD210-T4 MJD210T4 MJD210RLG MJD210RL MJD210-IMJD243T4
您是否在找:标准包装:75
类别:分离式半导体产品
家庭:晶体管(BJT)-单路
系列:-
晶体管类型:NPN
电流-集电极(Ic)(最大):4A
电压-集电极发射极击穿(最大):100V
Ib、Ic条件下的Vce饱和度(最大):600mV@100mA,1A
电流-集电极截止(最大):-
MJD243G历史价格
MJD243G PDF下载
- 大小:98.2KB
厂家:ON Semiconductor TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Power Dissipation Pd:12.5mW; DC Collector Current:4A; DC Current Gain hFE:40; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:300mV; Complementary Device:MJD253G; Continuous Collector Current Ic Max:4A; Current Ic Continuous a Max:4A; Current Ic hFE:1A; Gain Bandwidth ft Typ:40MHz; Hfe Min:15; Package / Case:D-PAK; Peak Current Icm:8A; Power Dissipation Pd:1.4W; Power Dissipation Ptot Max:12.5W; Termination Type:SMD; Transistor Type:; Voltage Vcbo:40V


