MJD50G历史价格
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厂家:ON Semiconductor TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:1.56W; DC Collector Current:1A; DC Current Gain hFE:10; Transistor Case Style:D-PAK; No. of Pins:4; SVHC:No SVHC (15-Dec-2010); Application Code:PGP; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:200mA; External Depth:10.28mm; External Length / Height:2.38mm; External Width:6.73mm; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:10MHz; Gain Bandwidth ft Typ:10MHz; Hfe Min:25; No. of Transistors:1; Pa...

