MR856G
参数信息:
参数信息:
反向重复峰值电压VRRM(max)(V):600
平均整流器前向电流IO(max)(A):3
瞬间前向电压VF(max)@IF(V):1.25@3.0A
非重复峰值浪涌电流IFSM(max)(A):100
瞬间反转电流IR(max)(mA):0.010
封装/温度(℃):CASE267-05/-65~125
MR856G历史价格
MR856G PDF下载
- 大小:43.5KB
厂家:ON Semiconductor DIODE, FAST, 3A, 600V, AXIAL; Diode Type:Fast Recovery; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):3A; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:300ns; Forward Surge Current Ifsm Max:100A; Diode Case Style:DO-201AD; No. of Pins:2; SVHC:No SVHC (15-Dec-2010); Current Ifsm:100A; Forward Voltage:1.25V; Junction Temperature Tj Max:125°C; Package / Case:DO-201AD; Reverse Recovery Time trr Typ:200ns; Termination Type:Axial Leaded; Breakdown Voltage Max:600V

