NTMFS4841NT1G NTD25P03LG NTD25P03L1G NTD25P03L NTD24N06T4G NTD24N06T4 NTD24N06LT4G NTD24N06LT4 NTD24N06LG NTD24N06L4TNTMS4705NR2G
您是否在找:NTMS10P02R2G
参数信息:
参数信息:
源漏极间雪崩电压VBR(V):20
源漏极最大导通电阻rDS(on)(mΩ):14
最大漏极电流Id(on)(A):1.600
通道极性:P沟道
封装/温度(℃):SOIC-8/-55 ~150
描述:20 V, 10 A功率MOSFET
NTMS10P02R2G PDF下载
- 大小:175.1KB
厂家:ON Semiconductor P CHANNEL MOSFET, -20V, 10A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-880mV ;RoHS Compliant: Yes

