SI2315BDS-T1 SI2315BDST1 SI2315BDS SI2315 SI2314EDS-T1-E3 SI2314EDS-T1 SI2314EDST1 SI2314EDS SI2314DS-T1-E3 SI2314DSSI2315BDS-TI-E3
您是否在找:标准包装:3,000
类别:分离式半导体产品
家庭:FET-单路
系列:TrenchFET®
FET型:MOSFETP通道,金属氧化物
FET特点:逻辑电平门
开态Rds(最大)@Id,Vgs@25°C:50毫欧@3.85A,4.5V
漏极至源极电压(Vdss):12V
电流-连续漏极(Id)@25°C:3A
SI2315BDS-T1-E3 PDF下载
- 大小:110.3KB
厂家:Vishay MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-0.9V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:3.0A; Current, Idm Pulse:12A; No. of Pins:3; Power Dissipation:0.75W; Power Output:0.75W; Power, Pd:0.75W; Power, Ptot:0.75W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V P Channel:0.065ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.05ohm; Resistance, Rds on Max:0.05ohm; SMD Marking:M5; Temperature, Current:25°C; Temperature, Fu...


