HGTG11N120CN HGTG10N120ND HGTG10N120BNDQ HGTG10N120BND_NL HGTG10N120BND hgtg10n120bn HGTD8P50GIS HGTD8P50G1S9A HGTD8P50G1S HGTD8P50G1HGTG11N120CND_NL
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参数信息:
参数信息:
制造商: Fairchild Semiconductor
产品种类: IGBT 晶体管
封装 / 箱体: TO-247
集电极—发射极最大电压 VCEO: 1200 V
集电极—射极击穿电压: 1200 V
集电极—射极饱和电压: 2.1 V
栅极/发射极最大电压: 20 V
集电极最大连续电流 Ic: 43 A
栅极—射极漏泄电流: +/- 250 nA
HGTG11N120CND PDF下载
- 大小:110.12KB
厂家:INTERSIL [Intersil Corporation] 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

