MJD45H11-T4 MJD45H11T4 MJD45H11RLG MJD45H11RL MJD45H11G MJD45H11D MJD45H11-1G MJD45H11-1 MJD45H11-001 MJD45H11001MJD45H11TF
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参数信息:
参数信息:
类型:PNP
集电极-发射集最小雪崩电压VCEO(V):80
集电极最大电流IC(Max)(A):8
直流电流增益hFE最小值(dB):40
直流电流增益hFE最大值(dB):-
最小电流增益带宽乘积Ft(MHz):50
总功耗PD(W):20
封装/温度(℃):DPAK/-55~150
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- 大小:89.15KB
厂家:ONSEMI [ON Semiconductor] SILICON POWER TRANSISTORS
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