NTD3055L170T4G NTD3055L170T4 NTD3055L170G NTD3055L170-1G NTD3055L170 NTD3055L104T4G NTD3055L104T4 NTD3055L104G NTD3055L104-1G NTD3055L104-1NTJS3151PT1G
您是否在找:NTGS3441T1G
参数信息:
参数信息:
源漏极间雪崩电压VBR(V):20
源漏极最大导通电阻rDS(on)(mΩ):90
最大漏极电流Id(on)(A):2.350
通道极性:P沟道
封装/温度(℃):TSOP-6/-55 ~150
描述:1 A, 20 V功率MOSFET
NTGS3441T1G PDF下载
- 大小:54.46KB
厂家:ONSEMI [ON Semiconductor] Power MOSFET 1 Amp, 20 Volts

