标准包装:500
类别:分离式半导体产品
家庭:晶体管(BJT)-单路
系列:-
晶体管类型:NPN
电流-集电极(Ic)(最大):2A
电压-集电极发射极击穿(最大):80V
Ib、Ic条件下的Vce饱和度(最大):600mV@100mA,1A
电流-集电极截止(最大):-
BD237G PDF下载
- 大小:63.3KB
厂家:ON Semiconductor TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:25W; DC Collector Current:2A; DC Current Gain hFE:3; Transistor Case Style:TO-126; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:2A; Current Ic Continuous a Max:2A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:25; No. of Transistors:1; Package / Case:TO-126; Power Dissipation Pd:25W; Power Dissipation Ptot Max:26W; Termination Type:Through Ho...
- 特价供应BD237G
只做进口原装,假一赔百!
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