hgtg10n120bn HGTD8P50GIS HGTD8P50G1S9A HGTD8P50G1S HGTD8P50G1 HGTD7N60C3S9A HGTD7N60C3S HGTD7N60C3 HGTD7N60B3S HGTD7N60B3HGTG10N120BND_NL
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参数信息:
制造商: Fairchild Semiconductor
产品种类: IGBT 晶体管
封装 / 箱体: TO-247
集电极—发射极最大电压 VCEO: 1200 V
集电极—射极击穿电压: 1200 V
集电极—射极饱和电压: 2.45 V
栅极/发射极最大电压: 20 V
集电极最大连续电流 Ic: 17 A
栅极—射极漏泄电流: +/- 250 nA
HGTG10N120BND PDF下载
- 大小:82.69KB
厂家:INTERSIL [Intersil Corporation] 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

