IRF5852TRBF IRF5852TR IRF5852 IRF5851TRPBF IRF5851TR IRF5851P IRF5851N IRF5851 IRF5850TRPBF IRF5850TRIRF588
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参数信息:
参数信息:
类别:分离式半导体产品
家庭:MOSFETs - 阵列
系列:HEXFET®
FET 型:2 个 N 沟道(双)
FET 特点:逻辑电平门
开态Rds(最大)@ Id, Vgs @ 25° C:90 毫欧 @ 2.7A, 4.5V
漏极至源极电压(Vdss):20V
电流 - 连续漏极(Id) @ 25° C:2.7A
Id 时的 Vgs(th)(最大):1.25V @ 250µA
IRF5852TRPBF PDF下载
- 大小:126.6KB
厂家:International Rectifier MOSFET, DUAL, N, TSOP-6; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.25V; Power Dissipation Pd:960mW; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Current Id Max:2.7A; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Termination Type:SMD; Application Code:LowR; Cont Current Id @ 25°C:2.7A; Cont Current Id @ 70°C:2.2; Power Dissipation Pd:960mW; Pulse Current Idm:11A; Voltage Vds:20V; ...

