QSBT40
QUAD DATA LINE SCHOTTKY BUS TERMINATOR
Features
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Low Forward Voltage Drop
Fast Switching
Very High Density
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and
ESD Protection
Provide transient protection for high-speed data
lines in accordance with:
IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact)
IEC61000-4-4 (EFT) 80A (tp = 5/50 ns)
IEC61000-4-5 (Lightning) Class 3
A
NEW PRODUCT
SOT-363
Dim
Min
0.10
1.15
2.00
0.30
1.80
戮
0.90
0.25
0.10
0掳
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8掳
A
B
C
D
F
M
TOP VIEW
B C
G
H
K
0.65 Nominal
H
J
K
L
M
J
Mechanical Data
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Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Weight: 0.006 grams (approx.)
Marking Code: KST (See Page 2)
@ T
A
= 25掳C unless otherwise specified
D
F
L
DL1
V
CC
DL2
a
All Dimensions in mm
DL4
GND
DL3
Maximum Ratings
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
@ t < 1.0s
Symbol
V
RRM
V
RWM
V
R
I
FM
I
FSM
P
d
R
qJA
T
j
T
STG
Value
30
200
600
200
625
-55 to +125
-65 to +125
Unit
V
mA
mA
mW
掳C/W
掳C
掳C
Electrical Characteristics
@ T
A
= 25掳C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol
V
(BR)R
Min
30
戮
戮
戮
戮
Typ
戮
戮
戮
10.0
戮
Max
戮
280
350
450
550
1000
2
戮
5.0
Unit
V
Test Condition
I
R
= 100mA
I
F
= 0.1mA, tp < 300碌S
I
F
= 1.0mA, tp < 300碌S
I
F
= 10mA, tp < 300碌S
I
F
= 30mA, tp < 300碌S
I
F
= 100mA, tp < 300碌S
V
R
= 25V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Forward Voltage (Note 2)
V
F
mV
mA
pF
ns
Reverse Current (Note 2)
Total Capacitance (Note 3)
Reverse Recovery Time
I
R
C
T
t
rr
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. At V
R
= 0V, DL(X) to V
CC
or GND.
DS30195 Rev. 7 - 2
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QSBT40
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