| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| 1N5819.TR |
暂无描述 |
110.54K |
FAIRCHILD |
 |
| 1N5819_08 |
Schottky Rectifier, 1.0 A |
79.79K |
VISAY [Vishay Siliconix] |
|
| 1N5819-1 |
HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER |
88.5K |
SENSITRON |
|
| 1N5819-1 |
Schottky Rectifier[Qual Data]
|
27.98K |
ETC |
|
| 1N5819-B |
1.0A SCHOTTKY BARRIER RECTIFIER |
68.52K |
DIODES [Diodes Incorporated] |
|
| 1N5819-CA2-R |
SCHOTTKY BARRIER DIODE |
88.24K |
UTC [Unisonic Technologies] |
|
| 1N5819CSM4 |
ULTRA FAST RECTIFIER IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
16.51K |
SEME-LAB [Seme LAB] |
|
| 1N5819CSM4 |
ULTRA FAST RECTIFIER IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
20.26K |
SEME-LAB |
|
| 1N5819DP |
|
0.67K |
TD |
|
| 1N5819-E3/54 |
Schottky Barrier Rectifiers |
394.06K |
VISAY [Vishay Siliconix] |
|
| 1N5819-E3/54 |
Diode Schottky 40V 1A Through Hole DO-204AL (DO-41) |
75K |
|
|
| 1N5819-E3/73 |
Schottky Barrier Rectifiers |
394.06K |
VISAY [Vishay Siliconix] |
|
| 1N5819-E3/73 |
Diode Schottky 40V 1A Through Hole DO-204AL (DO-41) |
75K |
|
|
| 1N5819G |
Switching Diodes |
118.26K |
MCC |
|
| 1N5819G |
Diode Schottky 40V 1A Through Hole Axial |
298K |
|
|
| 1N5819G |
1 Amp Schottky Rectifier |
119.35K |
MICROSEMI |
|
| 1N5819-G |
DIODE SCHOTTKY 40V 1A DO41 |
32.8K |
COMCHIP |
|
| 1N5819H |
SCHOTTKY BARRIER RECTIFIERS |
51.96K |
PANJIT [Pan Jit International Inc.] |
|
| 1N5819HS |
|
258.2K |
TD |
|
| 1N5819HS-HAF |
Dated: 14/06/2014 Rev: 01
TOP DYNAMIC
1N5817HS THRU 1N5819HS-HAF
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 40 V
Forward Current - 1 A
Features
? Halogen and Antimony Free(HAF), RoHS compliant
Absolute Maximum Ratings and Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For
capacitive load, derate by 20%
Parameter
Symbols 1N5817HS 1N5818HS 1N5819HS Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
20 30 40 V
Maximum RMS Voltage V
RMS
14 21 28 V
Maximum DC Blocking Voltage V
DC
20 30 40 V
Maximum Average Forward Rectified Current I
F(AV)
1 A
Peak Forward Surge Current 8.3 ms Single Half Sine Wave
Superimposed on Rated Load(JEDEC methode)
I
FSM
25 A
Maximum Instantaneous Forward Voltage
at I
F
= 1 A
at I
F
= 3 A
V
F
0.45
0.75
|
169.82K |
TD |
|
