| 型号 |
简要描述 |
文件大小 |
厂家 |
下载 |
| 1N5819H |
SCHOTTKY BARRIER RECTIFIERS |
51.96K |
PANJIT [Pan Jit International Inc.] |
 |
| 1N5819HS |
|
258.2K |
TD |
|
| 1N5819HS-HAF |
Dated: 14/06/2014 Rev: 01
TOP DYNAMIC
1N5817HS THRU 1N5819HS-HAF
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 40 V
Forward Current - 1 A
Features
? Halogen and Antimony Free(HAF), RoHS compliant
Absolute Maximum Ratings and Characteristics
Ratings at 25 ℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For
capacitive load, derate by 20%
Parameter
Symbols 1N5817HS 1N5818HS 1N5819HS Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
20 30 40 V
Maximum RMS Voltage V
RMS
14 21 28 V
Maximum DC Blocking Voltage V
DC
20 30 40 V
Maximum Average Forward Rectified Current I
F(AV)
1 A
Peak Forward Surge Current 8.3 ms Single Half Sine Wave
Superimposed on Rated Load(JEDEC methode)
I
FSM
25 A
Maximum Instantaneous Forward Voltage
at I
F
= 1 A
at I
F
= 3 A
V
F
0.45
0.75
|
169.82K |
TD |
|
| 1N5819HW |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
61.61K |
DIODES [Diodes Incorporated] |
|
| 1N5819HW |
CURRENT: 1.0 A
VOLTAGE RANGE: 40V
1N5819HW
Features
Maximum Ratings
@ T
A
= 25C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol 1N5819HW Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage @ I
R
= 1.0mA
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
RMS Reverse Voltage V
R(RMS) 28 V
Average Rectified Output Current @ T
L
= 90C I
O 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM 25 A
Power Dissipation (Note 2) P
d 450 mW
Typical Thermal Resistance Junction to Ambient (Note 2) R
JA 222 C/W
Operating and Storage Temperature Range T
j,
T
STG -65 to +125 C
Characteristic Symbol M |
135.53K |
SUNMATE/森美特 |
|
| 1N5819HW |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
62.88K |
DIODES |
|
| 1N5819HW_1 |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
82.76K |
DIODES [Diodes Incorporated] |
|
| 1N5819HW-7-F |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
82.76K |
DIODES |
|
| 1N5819HW-7-F |
Diode Schottky 40V 1A Surface Mount SOD-123 |
287K |
|
|
| 1N5819L |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
152.37K |
Bytes |
|
| 1N5819L-CA2-R |
SCHOTTKY BARRIER DIODE |
96.51K |
Unisonic Technologies |
|
| 1N5819M |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
62.38K |
DIODES [Diodes Incorporated] |
|
| 1N5819M |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
62.66K |
DIODES |
|
| 1N5819PT |
VOLTAGE RANGE 20 - 40 Volts CURRENT 1.0 Ampere |
69.06K |
CHENMKO |
|
| 1N5819RL |
LOW DROP POWER SCHOTTKY RECTIFIER |
56.28K |
STMICROELECTRONICS [STMicroelectronics] |
|
| 1N5819RL |
LOW DROP POWER SCHOTTKY RECTIFIER |
59.67K |
STMICROELECTRONICS |
|
| 1N5819RLG |
JFET Chopper Transistors |
75.99K |
ONSEMI |
|
| 1N5819RLG |
Diode Schottky 40V 1A Through Hole Axial |
298K |
|
|
| 1N5819S |
SCHOTTKY BARRIER RECTIFIER |
52.22K |
BILIN [Galaxy Semi-Conductor Holdings Limited] |
|
| 1N5819S |
|
68.98K |
MDD |
|
