1N5221B...1N5267B
Vishay Telefunken
Silicon Z鈥揇iodes
Features
D
D
D
D
Very sharp reverse characteristic
Very high stability
Low reverse current level
V
Z
鈥搕olerance
卤
5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z鈥揷urrent
Junction temperature
Storage temperature range
T
L
x
Test Conditions
75
掳
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
200
鈥?5...+200
Unit
mW
mA
掳
C
掳
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8鈥?, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V
Document Number 85588
Rev. 2, 06-Aug-99
www.vishay.de
鈥?/div>
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