DATA SHEET
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4814 is a power transistor featuring low-saturation voltage and high h
FE
. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
鈥?Low V
CE(sat)
: V
CE(sat)
鈮?/div>
0.3 V
鈥?High h
FE
:
鈥?On-chip dumper-diode
鈥?Auto-mounting possible in radial taping specifications
@I
C
= 1.5 A, I
B
= 10 mA
h
FE
= 300 to 1,200 @V
CE
= 2.0 V, I
C
= 1.0 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25掳C)
掳
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
Ta = 25掳C
PW
鈮?/div>
300
碌
s, duty cycle
鈮?/div>
10%
Conditions
Ratings
120
100
7.0
卤2.5
卤5.0
1.0
1.8
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
掳C
掳C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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