NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
鈥?Low noise
鈥?NF = 1.3 dB
鈥?NF = 1.3 dB
TYP.
TYP.
PACKAGE DIMENSIONS
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
2.8卤0.2
(Units: mm)
0.4
鈥?.05
+0.1
鈥?Mini-Mold package
EIAJ: SC-59
1.5
0.65
鈥?.15
+0.1
0.95
ORDERING INFORMATION
PART
NUMBER
2SC5182-T1
2.9卤0.2
2
T86
0.95
Embossed tape, 8 mm wide,
Pin No. 3 (Collector)
facing the perforations
3 000 units/reel
Pins No. 1 (Emitter) and No. 2 (Base)
facing the perforations
0.3
2SC5182-T2
Embossed tape, 8 mm wide,
1.1 to 1.4
Marking
(available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
30
90
150
鈥?5 to +150
V
V
V
mA
mW
藲
C
藲
C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12106EJ2V0DS00 (2nd edition)
(Previous No. TC-2479)
Date Published November 1996 N
Printed in Japan
0 to 0.1
*
Contact your NEC sales representative to order samples for evaluation
NEC
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