2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /
2SD1381F
!Features
1) High V
CEO
, V
CEO
=80V
2) High I
C
, I
C
=1A (DC)
3) Good h
FE
linearity
4) Low V
CE
(sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
!External
dimensions
(Units : mm)
2SD1898
0.5卤0.1
4.5
+0.2
鈭?.1
1.6卤0.1
1.5
+0.2
鈭?.1
4.0卤0.3
2.5
+0.2
鈭?.1
(1)
1.0卤0.2
(2)
(3)
0.4卤0.1
1.5卤0.1
0.4
+0.1
鈭?.05
0.4卤0.1
1.5卤0.1
0.5卤0.1
3.0卤0.2
!Structure
Epitaxial planer type
NPN silicon transistor
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol : DF
(1) Base
(2) Collector
(3) Emitter
2SD1733
1.5
卤
0.3
2SD1768S
4卤0.2
2卤0.2
3卤0.2
5.5
+
0.3
鈭?/div>
0.1
9.5
卤
0.5
(15Min.)
0.9
1.5
0.75
0.9
0.65
卤
0.1
2.5
0.45
+0.15
鈭?.05
3Min.
6.5
卤
0.2
5.1
+
0.2
鈭?/div>
0.1
C0.5
2.3
+
0.2
鈭?/div>
0.1
0.5
卤
0.1
0.55
卤
0.1
2.3
卤
0.2 2.3
卤
0.2
1.0
卤
0.2
5
2.5
+0.4
鈭?.1
0.5
0.45
+0.15
鈭?.05
(1) (2) (3)
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
2SD1863
6.8卤0.2
2.5卤0.2
2SD1381F
7.8卤0.2
Front
蠁
3.3
3.2卤0.2
10.8卤0.2
4.4卤0.2
Back
蠁
3.19
0.9
1.2
1.0
1.6
1.1
6.9
9.2
C0.7
0.65Max.
0.95
14.5卤0.5
16.0卤0.5
1.75
0.8
0.5卤0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45卤0.1
2.3卤0.5
2.3卤0.5
0.7卤0.1
1.76卤0.5
(1) (2) (3)
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
ROHM : TO-126FP
(1) Emitter
(2) Collector
(3) Base
1
2
3
4
