鈻?/div>
Electrical Characteristics
T
a
=
25掳C
卤
3掳C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
I
C
= 100
碌A,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 100
碌A,
I
C
= 0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
1 A
I
C
=
1 A, I
B
=
1 mA
I
C
=
1 A, I
B
=
1 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
Min
120
100
5
Typ
Max
Unit
V
V
V
碌A
碌A
铮?/div>
V
V
MHz
0.1
1
4 000
40 000
1.5
2
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: February 2003
SJD00269BED
1
1
2
3
