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2SK2141 Datasheet

  • 2SK2141

  • MOS Field Effect Transistor

  • 94.40KB

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2141
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2141 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
10.0 卤 0.3
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
蠁3.2
卤 0.2
4.5 卤 0.2
2.7 卤 0.2
Low On-state Resistance
R
DS(on)
= 1.1
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
15.0 卤 0.3
L
OW
C
iss
C
iss
= 1150 pF TYP.
3 卤 0.1
1 2 3
4 卤 0.2
High Avalanche Capability Ratings
Isolated TO-220 (MP-45F) Package
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
*
600
卤30
卤6.0
卤24
35
2.0
鈥?5 to +150
150
6.0
12
V
V
A
A
W
W
掳C
掳C
A
mJ
1 2 3
2.54 TYP.
0.7 卤 0.1
13.5 MIN.
0.65 卤 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
掳C)
Total Power Dissipation (T
C
= 25
掳C)
P
T1
Total Power Dissipation (T
a
= 25
掳C)
P
T2
Storage Temperature
Channel Temperature
Single Avalanche Current
Single Avalanche Energy
*PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
**Starting T
ch
= 25
掳C,
R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
1.3 卤 0.2
1.5 卤 0.2
2.54 TYP.
12.0 卤 0.2
2.5 卤 0.1
T
stg
T
ch
I
AS
**
E
AS
**
1. Gate
2. Drain
3. Source
ISOLATED TO-220 (MP-45F)
Drain (D)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
Source (S)
Body diode
Gate (G)
Document No. TC-2514
(O.D. No. TC鈥?073)
Date Published January 1995 P
Printed in Japan
漏
1995

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