DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2512
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
鈥?Low On-Resistance
R
DS (on)1
= 15 m鈩?(V
GS
= 10 V, I
D
= 23 A)
R
DS (on)2
= 23 m鈩?(V
GS
= 4 V, I
D
= 23 A)
15.0卤0.3
10.0卤0.3
3.2卤0.2
4.5卤0.2
2.7卤0.2
3卤0.1
4卤0.2
鈥?Low C
iss
C
iss
= 2 100 pF TYP.
鈥?Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 藲C)
Total Power Dissipation (T
A
= 25 藲C)
Channel Temperature
Storage Temperature
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
1 2 3
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
卤20
卤45
卤180
35
2.0
150
V
A
A
W
W
藲C
0.7卤0.1
2.54
1.3卤0.2
1.5卤0.2
2.54
13.5MIN.
V
DSS
60
V
12.0卤0.2
2.5卤0.1
0.65卤0.1
1. Gate
2. Drain
3. Source
鈥?5 to +150 藲C
MP-45F (ISOLATED TO-220)
Drain
Body
Diode
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Gate
Gate
Protection
Diode
Source
Document No. D10291EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
漏
1995
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