鈮?/div>
1 %
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T1
P
T2
T
ch
T
stg
60
卤20
卤50
卤200
150
3.0
150
V
V
A
A
W
W
藲C
1
19 MIN.
3.0卤0.2
2
3
2.2卤0.2
5.45
1.0卤0.2
5.45
4.5卤0.2
0.6卤0.1
2.8卤0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
鈥?5 to +150 藲C
Body
Diode
Gate
Gate Protection
Diode
Source
The diode connected between the gate and source of the transis-
tor serves as a protector against ESD.
When this device is
actually used, an additional protection circuit is externally re-
quired if a voltage exceeding the rated voltage may be applied
to this device.
Document No. D10301EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
漏
1995